In this scholarly study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. solar cells, ZnO nanorods, antireflection coating, Al-doped ZnO, atomic layer deposition Introduction In recent decades, CACNLG most commercial solar cells are based on crystalline silicon [c-Si], but there is increasing efforts on thin film solar cells (second generation) as well as third generation solar cells which require the usage of nano/microstructures for high effectiveness and low priced [1]. Three-dimensional Si continues to be attracting much interest for long term applications in photovoltaic products because of the excellent properties [2-9]. Si wire-based solar panels possess two main advantages in accordance with industrial thin-film and crystalline Si absorbers. Initial, p-n junctions in the radial path enable minority companies to drift just short distances towards the junction area for effective carrier collection. Which means low quality Si recycleables can be employed, and production price will be reduced [2]. Furthermore, the improved light absorption by an purchased cable is related to the light-trapping impact to the event light [3,4]. Furthermore, a cable array transfer technique has been studied, which not only yields c-Si wires on a flexible substrate for photovoltaic applications, but also allows the c-Si wafer to be reused for further production of aligned wire arrays [7,8]. For the fabrication of Si nano/microstructures, a number of bottom-up methods have been developed, such as vapor-liquid-solid [VLS] growth [5-8], chemical vapor deposition [CVD] [9], and molecular beam epitaxy [10]. However, these growth processes have some disadvantages as they generally need high temperature and high vacuum or discharge toxic precursors. As an alternative top-down route, a few lithographic procedures, such as electron beam lithography [11], and reactive ion etching [RIE] [12] are widely used in Si-based fabrication processes, but they are expensive, time-consuming, and not suited for mass production of ordered nanostructures on a large scale. In contrast, electrochemical etching, together with pre-patterning in a lithographic step is one of the most successful approaches in fabricating a large number of wires with a low MK-2206 2HCl irreversible inhibition cost and simple process. Unlike the growth techniques, vertically well-aligned Si wire arrays are reproduced by electrochemical etching with uniform periodicity [13]. Also, the formed Si wires have smooth surfaces, unlike those formed by using deep RIE where surfaces are damaged and wavy. Nevertheless, Si wire solar panels even now face important challenges such as for example low cell MK-2206 2HCl irreversible inhibition efficiency and surface area recombination losses relatively. Here, we looked into two key elements for the Si cable solar cells to be able to enhance the cell shows: One is by using ZnO nanorods to improve power conversion effectiveness by suppressing light representation and raising light scattering towards the Si cable solar panels. The other is by using an Al-doped ZnO [AZO] coating to passivate the Si surface area also to facilitate the nucleation of ZnO nanorods. Lately, ZnO nanorods are thought to be a competent antireflection layer [ARC] to benefit MK-2206 2HCl irreversible inhibition MK-2206 2HCl irreversible inhibition from its great transparency, suitable refractive index ( em n /em = 2), MK-2206 2HCl irreversible inhibition and capability to type textured layer via anisotropic development [14,15]. Many strategies have been created to grow ZnO nanorods, such as VLS process [16], CVD [17], and a hydrothermal method [18]. Among them, the hydrothermal method has been regarded as a low-temperature process with a large area growth and high growth rate. ZnO nanorods with high crystal quality can be grown perpendicularly on any surface of the substrates using hydrothermal synthesis. In addition, the seed layer is also important for the growth of high-quality ZnO nanorods. Prior to ZnO nanorod growth, AZO.